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Description
The hydrogen sulfide sensor is a MEMS metal-oxide-semiconductor (MOS) sensor with high sensitivity to hydrogen sulfide. It utilizes advanced gas-sensitive material technology and semiconductor film deposition processes, along with an optimized MEMS substrate structure. This design enhances the sensor's sensitivity, response time, and stability compared to its predecessors. The product boasts exceptional consistency, significantly improving resistance to poisoning and drift issues. It can detect hydrogen sulfide concentrations ranging from 0.01 to 100 ppm, and the sensor demonstrates excellent resistance to silicon poisoning.
This sensor can be embedded in a variety of instruments or environmental improvement equipment related to the concentration of hydrogen sulfide in the air, providing timely and accurate concentration data for them. The detection process is convenient, accurate measurement, reliable operation, no need for re-calibration, greatly reducing the research and development cost, production cost.
When a voltage is applied to the built-in heater, the sensing layer material is heated to the optimal temperature required for detecting the target gas. The loop voltage is applied to measure the voltage VRL across the load resistor RL connected in series with the sensor. A DC power supply is used, and it is important to distinguish the polarity of the sensor. As long as the electrical characteristics of the sensor are met, the loop voltage VC and the heater voltage VH can share the same power supply circuit. To optimize the alarm level and ensure that the maximum power consumption of the sensitive material layer remains below its limit, the resistance value of the load resistor RL must be selected.

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